and the process to grow a plurality of the crystals. The crystals are of
the same size and orientation. They are grown on the same plane directly
from the melt or vapor. Tests successful.
The main development aim:
To grow the plurality of Si monocrystals in the polycrystalline wafer form for the solar energy cells as well as for the fast Si chip production.
The main advantages:
The properties of the solar cells are somewhere between the monocrystalline and polycrystalline cells. The cutting of ingots is not necessary, what leads to the less material consumption (material saved to 50%). The crystal growth rates are orders of magnitude greater than in monocrystal technique - actually of the order of seconds per wafer.
Cheap mass production of the solar cells on various substrates.
Further applications possible.